OPTO SEMICONDUCTOR
LIGHT EMITTING ELEMENT
Part No. feature Forward current Reverse voltage Allowable loss Operating temperature Operating temperature Forward voltage Forward voltage Emission output Emission output Emission output Emission output Emission output Peak emitting wavelength half angle half angle
IF VR PD Topr. Topr. VF IF Po Po Po Po IF λP Δθ Δθ
                Measurement condition   Measurement condition Measurement condition   Representative characteristics Representative characteristics
      Min. Max. Max.   Typ. Typ. Typ. Typ.   Typ. Min. Max.
EL-1CL3 spec
Infrared emitting diode(GaAs) 50 mA 4 V 80 mW -25 ℃ 85 ℃ 1.65 V 50 mA         50 mA 940 nm *-25 ° *25 °
EL-1CL3 spec
Infrared emitting diode(GaAs) 60 mA 4 V 95 mW -20 ℃ 70 ℃ 1.5 V 40 mA 1.8 mW       40 mA 940 nm *-53 ° *53 °
EL-1K3 spec
Infrared emitting diode(GaAs) 100 mA 5 V 170 mW -40 ℃ 100 ℃ 1.7 V 100 mA 4 mW       100 mA 940 nm *-36 ° *36 °
EL-1KL3 spec
Infrared emitting diode(GaAs) 100 mA 5 V 170 mW -30 ℃ 100 ℃ 1.7 V 100 mA 7 mW       100 mA 940 nm *-15 ° *15 °
EL-1KL5 spec
Infrared emitting diode(GaAs) 100 mA 5 V 170 mW -40 ℃ 100 ℃ 1.7 V 100 mA 5 mW       100 mA 940 nm *-5 ° *5 °
EL23G spec
Infrared emitting diode(GaAs) 60 mA 5 V 100 mW -20 ℃ 100 ℃ 1.6 V 60 mA   8 mV     50 mA 940 nm *-30 ° *30 °
EL321 spec
Infrared emitting diode(GaAs) 50 mA 5 V 75 mW -20 ℃ 85 ℃ 1.5 V 20 mA       550 μA 4 mA 940 nm *-30 ° *30 °
EL333 spec
Infrared emitting diode(GaAs) 50 mA 5 V 75 mW -25 ℃ 85 ℃ 1.5 V 50 mA   3 mV     20 mA 940 nm *-20 ° *20 °
EL333F1 spec
Infrared emitting diode(GaAs) 50 mA 5 V 75 mW -25 ℃ 85 ℃ 1.2 V 50 mA   3 mV     20 mA 940 nm *-20 ° *20 °
EL341 spec
Infrared emitting diode(GaAs) 50 mA 3 V 75 mW -25 ℃ 80 ℃ 1.5 V 20 mA     25 mW/sr   50 mA 940 nm *-14 ° *14 °
EL342 spec
Infrared emitting diode(GaAs) 50 mA 3 V 75 mW 0 ℃ 60 ℃ 1.5 V 20 mA 14 mW       50 mA 940 nm *-35 ° *35 °
EL615 spec
Infrared emitting diode(GaAs) 50 mA 5 V 60 mW -20 ℃ 70 ℃ 1.6 V 20 mA 1.9 mW       20 mA 940 nm *-20 ° *20 °
CL-1CL3 spec
Infrared emitting diode(GaALAs) 60 mA 4 V 95 mW -20 ℃ 70 ℃ 1.5 V 40 mA 7 mW       40 mA 880 nm *-53 ° *53 °
CL-1KL3 spec
Infrared emitting diode(GaALAs) 100 mA 5 V 170 mW -30 ℃ 100 ℃ 1.7 V 100 mA 7.5 mW       100 mA 880 nm *-17 ° *17 °
CL-1KL7 spec
Infrared emitting diode(GaALAs) 100 mA 5 V 200 mW -30 ℃ 100 ℃ 2 V 100 mA 8 mW       100 mA 880 nm *-8 ° *8 °
CL-203 spec
Infrared emitting diode(GaALAs) 80 mA 5 V 160 mW -40 ℃ 100 ℃ 2 V 80 mA 5 mW       50 mA 880 nm *-9 ° *9 °
CL-205 spec
Infrared emitting diode(GaALAs) 80 mA 3 V 160 mW -30 ℃ 100 ℃ 2 V 50 mA 10 mW       50 mA 870 nm *-9 ° *9 °
CL-207 spec
Infrared emitting diode(GaALAs) 100 mA 5 V 170 mW -30 ℃ 100 ℃ 1.6 V 20 mA 2 mW       20 mA 880 nm *-35 ° *35 °
CL-209 spec
Infrared emitting diode(GaALAs) 80 mA 5 V 140 mW -20 ℃ 80 ℃ 1.6 V 20 mA 4.5 mW       20 mA 880 nm *-85 ° *85 °
CL-211 spec
Infrared emitting diode(GaALAs) 50 mA 4 V 85 mW -30 ℃ 85 ℃ 1.6 V 20 mA 5 mW       20 mA 870 nm *-12 ° *12 °
ML-1CL3 spec
Infrared emitting diode(GaALAs) 50 mA 3 V 80 mW -20 ℃ 70 ℃ 1.7 V 50 mA 8 mW       20 mA 865 nm *-53 ° *53 °
ML341H spec
Infrared emitting diode(GaALAs) 80 mA 3 V 150 mW -30 ℃ 100 ℃ 1.6 V 20 mA 3.2 mW       20 mA 870 nm *-14 ° *14 °
HL601 spec
Infrared emitting diode(GaALAs) 50 mA 5 V 85 mW -20 ℃ 70 ℃ 1.7 V 20 mA 1.5 mW       20 mA 850 nm *-75 ° *75 °
ML615 spec
Infrared emitting diode(GaALAs) 50 mA 4 V 70 mW -20 ℃ 70 ℃ 1.6 V 20 mA 2.8 mW       20 mA 875 nm *-20 ° *20 °
HL615 spec
Infrared emitting diode(GaALAs) 50 mA 5 V 70 mW -20 ℃ 70 ℃ 1.6 V 20 mA 2.6 mW       20 mA 850 nm *-20 ° *20 °
BL15-1101H spec Pin-point red light emitting diode(AlGaInP) 40 mA 3 V 120 mW -30 ℃ 85 ℃ 2.8 V 20 mA 0.8 mW       20 mA 650 nm *-60 ° *60 °
BL15-1212H spec
Pin-point red light emitting diode(AlGaInP) 40 mA 3 V 120 mW -30 ℃ 85 ℃ 2.8 V 20 mA 1 mW       20 mA 650 nm *-18 ° *18 °
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